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BUK768R1-40E bảng dữ liệu(PDF) 1 Page - NXP Semiconductors |
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1 / 14 page 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data [1] Continuous current is limited by package. BUK768R1-40E N-channel TrenchMOS standard level FET Rev. 1.1 — 10 July 2012 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V ID drain current VGS =10V; Tmb =25 °C; see Figure 1 [1] --75 A Ptot total power dissipation Tmb =25 °C; see Figure 2 --96 W Static characteristics RDSon drain-source on-state resistance VGS =10V; ID =20A; Tj =25°C; see Figure 11 -5.6 7.2 m Ω Dynamic characteristics QGD gate-drain charge VGS =10V; ID =20A; VDS = 32 V; see Figure 13; see Figure 14 -7.4 -nC |
Số phần tương tự - BUK768R1-40E_15 |
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Mô tả tương tự - BUK768R1-40E_15 |
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