BUK762R0-40E_15 datasheet(6/13 Pages) PHILIPS

tên linh kiện	BUK762R0-40E

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NXP Semiconductors

BUK762R0-40E

N-channel TrenchMOS standard level FET

BUK762R0-40E

All information provided in this document is subject to legal disclaimers.

Product data sheet

13 July 2012

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Ciss

input capacitance

-

6250

8500

pF

Coss

output capacitance

-

1210

1450

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 15

-

605

840

pF

td(on)

turn-on delay time

-

29

-

ns

tr

rise time

-

36

-

ns

td(off)

turn-off delay time

-

79

-

ns

tf

fall time

VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;

RG(ext) = 5 Ω

-

46

-

ns

LD

internal drain

inductance

from upper edge of drain mounting

base to center of die

-

2.5

-

nH

LS

internal source

inductance

from source lead to source bonding

pad

-

7.5

-

nH

Source-drain diode

VSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16

-

0.79

1.2

V

trr

reverse recovery time

-

43

-

ns

Qr

recovered charge

IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 25 V

-

54

-

nC

003aah094

0

60

120

180

240

300

0

0.5

1

1.5

VDS(V)

ID

(A)

VGS(V) = 20

4.5

5

8

10

4

6

Tj = 25 °C; tp = 300 μs

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

003aah095

0

2.5

5

7.5

10

0

5

10

15

20

VGS(V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

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Nexperia B.V. All right...	BUK762R0-40E	721Kb / 13P	N-channel TrenchMOS standard level FET

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