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NXP Semiconductors
BUK7Y153-100E
N-channel 100 V, 153 mΩ standard level MOSFET in LFPAK56
BUK7Y153-100E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
8 May 2013
6 / 13
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ciss
input capacitance
-
373
497
pF
Coss
output capacitance
-
62
74
pF
Crss
reverse transfer
capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
-
49
67
pF
td(on)
turn-on delay time
-
4
-
ns
tr
rise time
-
4.8
-
ns
td(off)
turn-off delay time
-
7.8
-
ns
tf
fall time
VDS = 80 V; RL = 10 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
4.5
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 2 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
0.81
1.2
V
trr
reverse recovery time
-
26.5
-
ns
Qr
recovered charge
IS = 2 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
-
27.8
-
nC
003aai419
0
5
10
15
20
0
2
4
6
8
10
VDS(V)
ID
(A)
VGS(V) = 4
4.5
5
6
7
5.5
Tj = 25 °C; tp = 300 μs
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
003aai420
0
80
160
240
320
0
5
10
15
20
VGS(V)
RDSon
(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values


Số phần tương tự - BUK7Y153-100E_15

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