công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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BF1100WR bảng dữ liệu(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1100WR bảng dữ liệu(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 14 page 1995 Apr 25 2 Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 3g2 gate 2 4g1 gate 1 Fig.1 Simplified outline (SOT343R) and symbol. Marking code: MF. handbook, halfpage MAM192 s,b d g 1 g 2 Top view 21 34 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 14 V ID drain current −− 30 mA Ptot total power dissipation −− 280 mW Tj operating junction temperature −− 150 °C yfs forward transfer admittance 24 28 33 mS Cig1-s input capacitance at gate 1 − 2.2 2.6 pF Crs reverse transfer capacitance f = 1 MHz − 25 35 fF F noise figure f = 800 MHz − 2 − dB |
Số phần tương tự - BF1100WR_15 |
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Mô tả tương tự - BF1100WR_15 |
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