BUK9215-55A_15 datasheet(7/13 Pages) PHILIPS

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NXP Semiconductors

BUK9215-55A

N-channel TrenchMOS logic level FET

BUK9215-55A

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Product data sheet

7 April 2014

7 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

LS

internal source

inductance

measured from source lead to source

bond pad

-

7.5

-

nH

Source-drain diode

VSD

source-drain voltage

IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 14

-

0.85

1.2

V

trr

reverse recovery time

-

51

-

ns

Qr

recovered charge

IS = 20 A; dIS/dt = -100 A/µs;

VGS = -10 V; VDS = 30 V; Tj = 25 °C

-

102

-

nC

03nb61

0

50

100

150

200

250

300

0

2

4

6

8

10

VDS (V)

ID

(A)

2.2

3

5

6

7

8

9

VGS (V) = 10

Fig. 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

03nf85

10

11

12

13

14

15

16

17

18

19

3

6

9

12

15

VGS (V)

RDSon

(mΩ)

Fig. 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values

03aa35

VGS (V)

0

6

4

2

10- 4

10- 5

10- 2

10- 3

10- 1

ID

(A)

10- 6

min

typ

max

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

03nb58

0

20

40

60

0

20

40

60

80

100

ID (A)

gfs

(S)

Fig. 8. Forward transconductance as a function of

drain current; typical values

Số phần tương tự - BUK9215-55A_15

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BUK9215-55A	289Kb / 12P	TrenchMOS logic level FET Rev. 01-16 August 2001
Inchange Semiconductor ...	BUK9215-55A	352Kb / 2P	isc N-Channel MOSFET Transistor
Nexperia B.V. All right...	BUK9215-55A	730Kb / 13P	N-channel TrenchMOS logic level FET 7 April 2014

More results

Mô tả tương tự - BUK9215-55A_15

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