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6 / 14 page BUK7Y12-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 April 2010 6 of 14 NXP Semiconductors BUK7Y12-55B N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =250 µA; VGS =0V; Tj = 25 °C 55 --V ID =250 µA; VGS =0V; Tj = -55 °C 50 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 10; see Figure 11 234V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10 --4.4 V ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 10 1 --V IDSS drain leakage current VDS =55V; VGS =0V; Tj = 25 °C - 0.02 1 µA VDS =55V; VGS =0V; Tj = 175 °C - - 500 µA IGSS gate leakage current VDS =0V; VGS =20V; Tj = 25 °C - 2 100 nA VDS =0V; VGS =-20 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =20A; Tj = 175 °C; see Figure 12; see Figure 13 - - 27.6 m Ω VGS =10V; ID =20A; Tj =25°C; see Figure 13; see Figure 12 -8.2 12 m Ω Dynamic characteristics QG(tot) total gate charge ID =20A; VDS =44V; VGS =10V; see Figure 14 - 35.2 - nC QGS gate-source charge - 9.24 - nC QGD gate-drain charge - 14.8 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 15 - 1550 2067 pF Coss output capacitance - 328 394 pF Crss reverse transfer capacitance - 153 210 pF td(on) turn-on delay time VDS =30V; RL =1.5 Ω; VGS =10V; RG(ext) =10 Ω - 19.3 - ns tr rise time - 29.4 - ns td(off) turn-off delay time - 43.2 - ns tf fall time - 22 - ns Source-drain diode VSD source-drain voltage IS =25A; VGS =25V; Tj =25 °C; see Figure 16 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =0V; VDS =30V -45 - ns Qr recovered charge - 84 - nC |
Số phần tương tự - BUK7Y12-55B_15 |
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Mô tả tương tự - BUK7Y12-55B_15 |
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