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BUK7Y10-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 9 April 2010
3 of 14
NXP Semiconductors
BUK7Y10-30B
N-channel TrenchMOS standard level FET
4.
Limiting values
[1]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[3]
Refer to application note AN10273 for further information.
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
--30
V
VDGR
drain-gate voltage
RGS =20kΩ
--30
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
Tmb =25°C; VGS =10V; see Figure 1;
see Figure 4
--67
A
Tmb =100 °C; VGS = 10 V; see Figure 1
--47
A
IDM
peak drain current
Tmb =25°C; tp ≤ 10 µs; pulsed;
see Figure 4
-
-
268
A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
--85
W
Tstg
storage temperature
-55
-
175
°C
Tj
junction temperature
-55
-
175
°C
Source-drain diode
IS
source current
Tmb = 25 °C
--67
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
-
268
A
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID =67A; Vsup ≤ 30 V; RGS =50 Ω;
VGS =10V; Tj(init) = 25 °C; unclamped
-
-
101
mJ
EDS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[1][2][3]
---J


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