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NXP Semiconductors
BUK7K6R2-40E
Dual N-channel 40 V, 5.8 mΩ standard level MOSFET
BUK7K6R2-40E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
6 November 2013
7 / 13
003aak982
0
2
4
6
8
0
30
60
90
120
150
VGS (V)
ID
ID
(A)
(A)
Tj = 25°C
Tj = 25°C
175°C
175°C
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
003aah028
10-6
10-5
10-4
10-3
10-2
10-1
0
2
4
6
VGS(V)
ID
(A)
max
typ
min
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage
003aah027
0
1
2
3
4
5
-60
0
60
120
180
Tj (°C)
VGS(th)
(V)
max
typ
min
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
003aak985
0
8
16
24
32
40
0
10
20
30
40
50
ID (A)
RDSon
RDSon
4.5 V
4.5 V
5 V
5 V
5.5 V
5.5 V
6 V
6 V
VGS = 10 V
VGS = 10 V
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values


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