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IRF054 bảng dữ liệu(PDF) 2 Page - International Rectifier

tên linh kiện IRF054
Giải thích chi tiết về linh kiện  Repetitive Avalanche Ratings
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IRF054 bảng dữ liệu(HTML) 2 Page - International Rectifier

  IRF054_15 Datasheet HTML 1Page - International Rectifier IRF054_15 Datasheet HTML 2Page - International Rectifier IRF054_15 Datasheet HTML 3Page - International Rectifier IRF054_15 Datasheet HTML 4Page - International Rectifier IRF054_15 Datasheet HTML 5Page - International Rectifier IRF054_15 Datasheet HTML 6Page - International Rectifier IRF054_15 Datasheet HTML 7Page - International Rectifier  
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IRF054
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
0.83
RthJA
Junction to Ambient
30
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
45*
ISM
Pulse Source Current (Body Diode) ➀
220
VSD
Diode Forward Voltage
2.5
V
Tj = 25°C, IS = 45A, VGS = 0V ➃
trr
Reverse Recovery Time
280
nS
Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
2.2
µC
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
6 0
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.68
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.022
VGS = 10V, ID = 31A ➃
Resistance
0.025
VGS = 10V, ID =45A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
2 0
S ( )VDS > 15V, IDS = 31A ➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS= 48V,VGS=0V
250
VDS = 48V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
8 0
1 8 0
VGS =10V, ID =45A
Qgs
Gate-to-Source Charge
2 0
4 5
nC
VDS = 30V
Qgd
Gate-to-Drain (‘Miller’) Charge
3 4
105
td(on)
Turn-On Delay Time
3 3
VDD =30V, ID =45A,
t r
Rise Time
1 8 0
RG =2.35Ω
td(off)
Turn-Off Delay Time
100
tf
Fall Time
100
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
4600
VGS = 0V, VDS = 25V
Coss
Output Capacitance
2000
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
340
nA
nH
ns
µA
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
*Current limited by pin diameter.


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