2003 Aug 20

2

NXP Semiconductors

Product data sheet

Schottky barrier diode

1PS10SB82

FEATURES

• Low forward voltage

• Low diode capacitance

• Leadless ultra small plastic package

(1.0 mm

× 0.6 mm × 0.5 mm)

• Power dissipation comparable to SOT23.

APPLICATIONS

• UHF mixers

• Sampling circuits

• Modulators

• Phase detectors

• Mobile communication, digital (still) cameras, PDA’s and

PCMCIA cards.

DESCRIPTION

An epitaxial Schottky barrier diode encapsulated in a

SOD882 leadless ultra small plastic package.

ESD sensitive device, observe handling precautions.

handbook, halfpage

MDB391

Bottom view

Fig.1 Simplified outline (SOD882), pin

configuration and symbol.

Marking code: S5.

The marking bar indicates the cathode.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

continuous reverse voltage

−

15

V

continuous forward current

−

30

mA

storage temperature

−65

+150

°C

junction temperature

−

150

°C