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NXP Semiconductors
1PS70SB10
Schottky barrier single diode
1PS70SB10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
17 December 2012
2 / 9
6. Ordering information
Table 3.
Ordering information
Package
Type number
Name
Description
Version
1PS70SB10
SC-70
plastic surface-mounted package; 3 leads
SOT323
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
1PS70SB10
7%0
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
30
V
IF
forward current
-
200
mA
IFRM
repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5
-
300
mA
IFSM
non-repetitive peak forward
current
tp < 10 ms; Tj(init) = 25 °C
-
600
mA
Ptot
total power dissipation
Tamb < 25 °C
-
200
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
-
625
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.


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