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1PS301 bảng dữ liệu(PDF) 3 Page - NXP Semiconductors |
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1PS301 bảng dữ liệu(HTML) 3 Page - NXP Semiconductors |
3 / 11 page 1PS301 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 5 — 6 March 2012 3 of 11 NXP Semiconductors 1PS301 Dual high-speed switching diode [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Single diode loaded. [3] Double diode loaded. [4] Tj =25 C before surge. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics [1] When switched from IF = 10 mA to IR =10mA; RL = 100 ; measured at IR =1mA. [2] When switched from IF =10mA; tr =20ns. Per device Ptot total power dissipation Tamb 25 C [1] -300 mW Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 415 K/W Rth(j-sp) thermal resistance from junction to solder point - - 200 K/W Table 7. Characteristics Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage IF = 1 mA - 610 - mV IF = 10 mA - 740 - mV IF = 50 mA --1.0 V IF = 100 mA --1.2 V IR reverse current VR = 25 V --30 nA VR = 80 V --0.5 A VR =25V; Tj =150 C --30 A VR =80V; Tj =150 C - - 100 A Cd diode capacitance f = 1 MHz; VR = 0 V --1.5 pF trr reverse recovery time [1] --4 ns VFR forward recovery voltage [2] --1.75 V |
Số phần tương tự - 1PS301_15 |
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Mô tả tương tự - 1PS301_15 |
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