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1PS301 bảng dữ liệu(PDF) 3 Page - NXP Semiconductors

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1PS301
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 6 March 2012
3 of 11
NXP Semiconductors
1PS301
Dual high-speed switching diode
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Single diode loaded.
[3]
Double diode loaded.
[4]
Tj =25 C before surge.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
[1]
When switched from IF = 10 mA to IR =10mA; RL = 100 ; measured at IR =1mA.
[2]
When switched from IF =10mA; tr =20ns.
Per device
Ptot
total power dissipation
Tamb  25 C
[1] -300
mW
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
+150
C
Tstg
storage temperature
65
+150
C
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1] -
-
415
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
200
K/W
Table 7.
Characteristics
Tamb =25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
IF = 1 mA
-
610
-
mV
IF = 10 mA
-
740
-
mV
IF = 50 mA
--1.0
V
IF = 100 mA
--1.2
V
IR
reverse current
VR = 25 V
--30
nA
VR = 80 V
--0.5
A
VR =25V; Tj =150 C
--30
A
VR =80V; Tj =150 C
-
-
100
A
Cd
diode capacitance
f = 1 MHz; VR = 0 V
--1.5
pF
trr
reverse recovery time
[1] --4
ns
VFR
forward recovery voltage
[2] --1.75
V


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