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IRFPS3815PBF bảng dữ liệu(PDF) 2 Page - International Rectifier |
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2 / 8 page IRFPS3815PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.015 Ω VGS = 10V, ID = 63A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = 10V, ID = 250µA gfs Forward Transconductance 47 ––– ––– S VDS = 50V, ID = 58A ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Qg Total Gate Charge ––– 260 390 ID = 58A Qgs Gate-to-Source Charge ––– 53 80 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– 150 230 VGS = 10V td(on) Turn-On Delay Time ––– 22 ––– VDD = 75V tr Rise Time ––– 130 ––– ID = 58A td(off) Turn-Off Delay Time ––– 51 ––– RG = 1.03Ω tf Fall Time ––– 60 ––– VGS = 10V Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 6810 ––– VGS = 0V Coss Output Capacitance ––– 1570 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 480 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 9820 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 670 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 1270 ––– VGS = 0V, VDS = 0V to 120V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 5.0 13 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD ≤ 58A, di/dt ≤ 450A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Starting T J = 25°C, L = 0.96mH RG = 25Ω, IAS = 58A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 58A, VGS = 0V trr Reverse Recovery Time ––– 270 410 ns TJ = 25°C, IF = 58A Qrr Reverse RecoveryCharge ––– 2990 4490 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 105 390 A
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS |
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