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BCW68GLT3G bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  General Purpose Transistor
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−45
Vdc
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, VEB = 0)
V(BR)CES
−60
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0
Vdc
Collector Cutoff Current
(VCE= −45 Vdc, IE = 0)
(VCE= −45 Vdc, IB = 0, TA = 150°C)
ICES
−20
−10
nAdc
mAdc
Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0)
IEBO
−20
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
(IC = −300 mAdc, VCE = −1.0 Vdc)
hFE
120
160
60
400
Collector−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
−0.7
Vdc
Base−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance
(VCB= −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
18
pF
Input Capacitance
(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
105
pF
Noise Figure
(IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
10
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.


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