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BCW68GLT3G bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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BCW68GLT3G bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
2 / 5 page BCW68GL www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −45 − − Vdc Collector−Emitter Breakdown Voltage (IC = −10 mAdc, VEB = 0) V(BR)CES −60 − − Vdc Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector Cutoff Current (VCE= −45 Vdc, IE = 0) (VCE= −45 Vdc, IB = 0, TA = 150°C) ICES − − − − −20 −10 nAdc mAdc Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0) IEBO − − −20 nAdc ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) (IC = −300 mAdc, VCE = −1.0 Vdc) hFE 120 160 60 − − − 400 − − − Collector−Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) − − −0.7 Vdc Base−Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − − −2.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB= −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − − 18 pF Input Capacitance (VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − − 105 pF Noise Figure (IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
Số phần tương tự - BCW68GLT3G |
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Mô tả tương tự - BCW68GLT3G |
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