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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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IRF1405SPBF bảng dữ liệu(PDF) 1 Page - International Rectifier |
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IRF1405SPBF bảng dữ liệu(HTML) 1 Page - International Rectifier |
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1 / 11 page  Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 131 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 93 A IDM Pulsed Drain Current 680 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 590 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) HEXFET® Power MOSFET Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G Absolute Maximum Ratings VDSS = 55V RDS(on) = 5.3mΩ ID = 131A Description 07/14/10 www.irf.com 1 Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 °C/W RθJA Junction-to-Ambient (PCB mount) ––– 40 D2Pak IRF1405SPbF TO-262 IRF1405LPbF IRF1405SPbF IRF1405LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Benefits PD-95331A Typical Applications l Industrial Motor Drive |
Số phần tương tự - IRF1405SPBF |
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Mô tả tương tự - IRF1405SPBF |
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