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IRF1404ZSPBF bảng dữ liệu(PDF) 1 Page - International Rectifier |
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1 / 12 page 06/19/12 www.irf.com 1 HEXFET® Power MOSFET This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of thisdesign area175°Cjunctionoperatingtemperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G Description l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Features IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF D2Pak IRF1404ZSPbF TO-220AB IRF1404ZPbF TO-262 IRF1404ZLPbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (S ilicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (P ackageLimited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energy d mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw i Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 k RθCS Case-to-Sink, Flat Greased Surface i 0.50 ––– RθJA Junction-to-Ambient i ––– 62 RθJA Junction-to-Ambient (PCB Mount) j ––– 40 300 (1.6mm from case ) 10 lbf yin (1.1Nym) °C/W Max. 180 l 120 l 710 120 l -55 to + 175 480 330 See Fig.12a, 12b, 15, 16 200 1.3 ± 20 V(BR)DSS 40V RDS(on) typ. 2.7mΩ max. 3.7mΩ ID (Silicon Limited) 180Al ID (Package Limited) 120A PD - 96040C |
Số phần tương tự - IRF1404ZSPBF |
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Mô tả tương tự - IRF1404ZSPBF |
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