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IRF1404ZSPBF bảng dữ liệu(PDF) 1 Page - International Rectifier

tên linh kiện IRF1404ZSPBF
Giải thích chi tiết về linh kiện  Advanced Process Technology
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nhà sản xuất  IRF [International Rectifier]
Trang chủ  http://www.irf.com
Logo IRF - International Rectifier

IRF1404ZSPBF bảng dữ liệu(HTML) 1 Page - International Rectifier

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06/19/12
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1
HEXFET® Power MOSFET
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
thisdesign area175°Cjunctionoperatingtemperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
S
D
G
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
Features
IRF1404ZPbF
IRF1404ZSPbF
IRF1404ZLPbF
D2Pak
IRF1404ZSPbF
TO-220AB
IRF1404ZPbF
TO-262
IRF1404ZLPbF
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (S ilicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (P ackageLimited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
k
RθCS
Case-to-Sink, Flat Greased Surface
i
0.50
–––
RθJA
Junction-to-Ambient
i
–––
62
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
°C/W
Max.
180
l
120
l
710
120
l
-55 to + 175
480
330
See Fig.12a, 12b, 15, 16
200
1.3
± 20
V(BR)DSS
40V
RDS(on) typ.
2.7mΩ
max.
3.7mΩ
ID (Silicon Limited)
180Al
ID (Package Limited)
120A
PD - 96040C


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