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IRF1324PBF bảng dữ liệu(PDF) 1 Page - International Rectifier |
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IRF1324PBF bảng dữ liệu(HTML) 1 Page - International Rectifier |
1 / 8 page 09/24/09 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G GD S Gate Drain Source PD - 96199A IRF1324PbF TO-220AB IRF1324PbF S D G VDSS 24V RDS(on) typ. 1.2m : max. 1.5m: ID (Silicon Limited) 353Ac ID (Package Limited) 195A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche CurrentÃd A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.50 RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– RθJA Junction-to-Ambient j ––– 62 See Fig. 14, 15, 22a, 22b 300 0.46 °C ± 20 2.0 270 °C/W 300 -55 to + 175 Max. 353 249 1412 195 A |
Số phần tương tự - IRF1324PBF_15 |
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