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IRF200B211 bảng dữ liệu(PDF) 2 Page - International Rectifier

tên linh kiện IRF200B211
Giải thích chi tiết về linh kiện  Brushed Motor drive applications
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IRF200B211 bảng dữ liệu(HTML) 2 Page - International Rectifier

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IRF200B211
2
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© 2015 International Rectifier
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March 31, 2015
Absolute Maximum Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
12
A  
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
9.0
IDM
Pulsed Drain Current 
34
PD @TC = 25°C
Maximum Power Dissipation
80
W
Linear Derating Factor
0.53
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
 
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.21
–––
V/°C
Reference to 25°C, ID = 1mA 
RDS(on)
Static Drain-to-Source On-Resistance
–––
135
170
m
 VGS = 10V, ID = 7.2A 
VGS(th)
Gate Threshold Voltage
3.0
–––
4.9
V
VDS = VGS, ID = 50µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 200V, VGS = 0V
–––
–––
250
VDS = 160V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Gate Resistance
–––
2.7
–––

Notes:
Repetitive rating; pulse width limited by max. junction temperature.

Limited by TJmax, starting TJ = 25°C, L = 3.4mH, RG = 50, IAS = 7.2A, VGS =10V.
ISD  7.2A, di/dt  1184A/µs, VDD  V(BR)DSS, TJ  175°C.
Pulse width
 400µs; duty cycle  2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.

Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 11.5A, VGS =10V.
This value determined from sample failure population, starting TJ = 25°C, L= 3.4mH, RG = 50, IAS = 7.2A, VGS =10V.
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
88
EAS (Thermally limited)
Single Pulse Avalanche Energy 
72
IAR
Avalanche Current 
See Fig 15, 16, 23a, 23b 
A
EAR
Repetitive Avalanche Energy 
mJ
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value 
98
Thermal Resistance  
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case 
–––
1.88
°C/W  
RCS
Case-to-Sink, Flat Greased Surface
0.50
–––
RJA
Junction-to-Ambient 
–––
62


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