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IRF200B211 bảng dữ liệu(PDF) 2 Page - International Rectifier |
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2 / 10 page IRF200B211 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 12 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 9.0 IDM Pulsed Drain Current 34 PD @TC = 25°C Maximum Power Dissipation 80 W Linear Derating Factor 0.53 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.21 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 135 170 m VGS = 10V, ID = 7.2A VGS(th) Gate Threshold Voltage 3.0 ––– 4.9 V VDS = VGS, ID = 50µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.7 ––– Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 3.4mH, RG = 50, IAS = 7.2A, VGS =10V. ISD 7.2A, di/dt 1184A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 11.5A, VGS =10V. This value determined from sample failure population, starting TJ = 25°C, L= 3.4mH, RG = 50, IAS = 7.2A, VGS =10V. Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 88 EAS (Thermally limited) Single Pulse Avalanche Energy 72 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ mJ EAS (tested) Single Pulse Avalanche Energy Tested Value 98 Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 1.88 °C/W RCS Case-to-Sink, Flat Greased Surface 0.50 ––– RJA Junction-to-Ambient ––– 62 |
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Mô tả tương tự - IRF200B211_15 |
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