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STS2301A bảng dữ liệu(PDF) 2 Page - SamHop Microelectronics Corp.

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Giải thích chi tiết về linh kiện  Super high dense cell design for low RDS(ON).
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STS2301A
www.samhop.com.tw
Dec,31,2010
2
VGS=±10V,VDS=0V
VGS=0V,IS= -1A
-0.86
-1
-20
-1
±100
-0.5
95
7
330
75
60
40
85
280
130
4.2
0.4
1.5
VDS=-10V,VGS=0V
VDD=-10V
ID=-1A
VGS=-4.5V
RGEN=6ohm
VGS=-4.5V , ID=-2.6A
VDS=-5V , ID=-2.6A
VDS=-16V , VGS=0V
VGS=0V,ID=-250uA
VGS=-2.5V , ID=-2.2A
130
-0.8
-1.5
120
160
Symbol
Min
Typ
Max
Units
BVDSS
V
IGSS
nA
VGS(th)
V
gFS
S
VSD
CISS
pF
COSS
pF
CRSS
pF
Qg
nC
nC
Qgs
nC
Qgd
tD(ON)
ns
tr
ns
tD(OFF)
ns
tf
ns
Gate-Drain Charge
SWITCHING CHARACTERISTICS
Gate-Source Charge
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-10V,ID=-2.6A,VGS=-4.5V
Fall Time
Turn-On Delay Time
mohm
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
Reverse Transfer Capacitance
ON CHARACTERISTICS
mohm
c
c
VDS=-10V,ID=-2.6A,
VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
-1.2
V
Notes
_
_
_
b
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
IS
Maximum Continuous Drain-Source Diode Forward Current
A
f=1.0MHz
VDS=VGS ,ID=-250uA
Ver 1.1


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