BCW73LT1 datasheet(1/6 Pages) LRC

tên linh kiện	BCW73LT1

Giải thích chi tiết về linh kiện	General Purpose Transistors(NPN Silicon)

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nhà sản xuất	LRC [Leshan Radio Company]

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LESHAN RADIO COMPANY, LTD.

M14–1/6

1

3

2

General Purpose Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

45

Vdc

Collector–Base Voltage

V CBO

50

Vdc

Emitter–Base Voltage

V EBO

5.0

Vdc

Collector Current — Continuous

I C

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

225

mW

TA = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

PD

300

mW

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ , Tstg

–55 to +150

°C

DEVICE MARKING

BCW72LT1 = K2

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

V (BR)CEO

45

—

Vdc

(IC = 2.0mAdc, VEB = 0 )

Collector–Emitter Breakdown Voltage

V (BR)CES

45

—

Vdc

(IC = 2.0 mAdc, VEB = 0 )

Collector–Base Breakdown Voltage

V (BR)CBO

50

—

Vdc

(IC = 10

µAdc, I

E= 0 )

Emitter–Base Breakdown Voltage

(I E= 10

µAdc, I

C= 0)

V (BR)EBO

5.0

—

Vdc

Collector Cutoff Current

I CBO

(V CB= 20 Vdc, I E= 0)

—

100

nAdc

(V CB= 20 Vdc, I E= 0, T A=100°C )

——

10

µAdc

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

BCW72LT1

2

EMITTER

3

COLLECTOR

1

BASE

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Số phần tương tự - BCW73LT1

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