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STBP432S bảng dữ liệu(PDF) 3 Page - SamHop Microelectronics Corp.

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Giải thích chi tiết về linh kiện  Super high dense cell design for extremely low RDS(ON).
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nhà sản xuất  SAMHOP [SamHop Microelectronics Corp.]
Trang chủ  http://www.samhop.com.tw
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STBP432S bảng dữ liệu(HTML) 3 Page - SamHop Microelectronics Corp.

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STB/P432S
Ver 1.0
www.samhop.com.tw
Jun,24,2008
3
T j ( °
C )
V G S = 10V
V G S = 4.5V
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C )
Figure 6. Breakdown Voltage Variation
with Temperature
50
40
30
20
10
0
2.0
1.8
1.6
1.4
1.2
1.0
0
0
25
50
125
100
75
V G S =10V
ID=30A
V G S =4.5V
ID=28A
150
60
0
0.5
1
1.5
2
2.5
3
12
9
6
3
1
12
24
36
48
60
1
15
20
15
10
5
0
0
T j =125 C
3.2
4.0
2.4
1.6
0.8
4.8
-55 C
25 C
V G S =3 V
V G S = 2.5V
V G S =4 V
V G S = 4.5V
V G S = 10V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
V DS =V GS
ID=250uA
-50
-25
0
25
50
75
100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
ID=250uA


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