STBP432S datasheet(2/8 Pages) SAMHOP

tên linh kiện	STBP432S

Giải thích chi tiết về linh kiện	Super high dense cell design for extremely low RDS(ON).

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Trang chủ	http://www.samhop.com.tw

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4 Symbol

Min

Typ

Max

Units

BVDSS

40

V

1

IGSS

±100

nA

VGS(th)

1

V

gFS

S

VSD

CISS

1600

pF

COSS

280

pF

CRSS

150

pF

Qg

20

nC

21

nC

Qgs

45

nC

Qgd

16

tD(ON)

32

ns

tr

3.5

ns

tD(OFF)

7.3

ns

tf

ns

Gate-Drain Charge

VDS=15V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=15V

ID=30A

VGS=10V

RGEN=3.3 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=15V,ID=30A,VGS=10V

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=30A

VDS=10V , ID=30A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

3

VGS=4.5V , ID=28A

m ohm

c

f=1.0MHz

c

VDS=15V,ID=30A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS

c

VGS=0V,IS=30A

0.95

1.3

V

Notes

STB/P432S

Ver 1.0

www.samhop.com.tw

Jun,24,2008

2

nC

VDS=15V,ID=28A,VGS=4.5V

15

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=1.25mH,RG=25

Ω,VDD = 20V.(See Figure13)

_

1.7

7

9

11

26

IS

Maximum Continuous Drain-Source Diode Forward Current

A

30

Số phần tương tự - STBP432S

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
SamHop Microelectronics...	STBP434S	257Kb / 8P	Super high dense cell design for low RDS(ON).
	STBP438A	262Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP438S	267Kb / 8P	Super high dense cell design for extremely low RDS(ON)

More results

Mô tả tương tự - STBP432S

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
SamHop Microelectronics...	STBP438S	267Kb / 8P	Super high dense cell design for extremely low RDS(ON)
	STBP438A	262Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP60L60	261Kb / 8P	Super high dense cell design for extremely low RDS(ON).
First Components Intern...	FMT2305	400Kb / 4P	Super High Dense Cell Design for Extremely Low RDS(ON)
SamHop Microelectronics...	STBP70L60	181Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP454	182Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP4410	195Kb / 10P	Super high dense cell design for extremely low RDS(ON).
	STBP440S	264Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STP35N10	139Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STP652F	126Kb / 7P	Super high dense cell design for extremely low RDS(ON).

More results

STBP432S bảng dữ liệu(PDF) 2 Page - SamHop Microelectronics Corp.

STBP432S bảng dữ liệu(HTML) 2 Page - SamHop Microelectronics Corp.

Số phần tương tự - STBP432S

Mô tả tương tự - STBP432S

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