STBP80L60 datasheet(2/8 Pages) SAMHOP

tên linh kiện	STBP80L60

Giải thích chi tiết về linh kiện	Super high dense cell design for extremely low RDS(ON).

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nhà sản xuất	SAMHOP [SamHop Microelectronics Corp.]

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2 / 8 page

STB/P80L60

Ver 2.1

www.samhop.com.tw

Dec,14,2012

2

8.0

57

4300

370

235

72

74

152

30

57.5

7.2

17.5

9.7

Symbol

Min

Typ

Max

Units

BVDSS

60

V

1

IGSS

±100

nA

VGS(th)

V

gFS

S

CISS

pF

COSS

pF

CRSS

pF

Qg

nC

tD(ON)

ns

tr

ns

tD(OFF)

ns

tf

ns

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=30V

ID=1A

VGS=10V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=40A

VDS=5V , ID=40A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=48V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

c

f=1.0MHz

c

VSD

nC

Qgs

nC

Qgd

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=30V,ID=25A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=8A

0.79

1.3

V

Notes

nC

VDS=30V,ID=25A,VGS=10V

VDS=30V,ID=25A,VGS=4.5V

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)

_

12.1

3

26

Số phần tương tự - STBP80L60

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Mô tả tương tự - STBP80L60

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STBP80L60 bảng dữ liệu(PDF) 2 Page - SamHop Microelectronics Corp.

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