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STBP60L60 bảng dữ liệu(PDF) 2 Page - SamHop Microelectronics Corp.

tên linh kiện STBP60L60
Giải thích chi tiết về linh kiện  Super high dense cell design for extremely low RDS(ON).
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nhà sản xuất  SAMHOP [SamHop Microelectronics Corp.]
Trang chủ  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STBP60L60 bảng dữ liệu(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
±100
nA
VGS(th)
1
V
21
gFS
26
S
VSD
CISS
1830
pF
COSS
182
pF
CRSS
120
pF
Qg
45
nC
70
nC
Qgs
125
nC
Qgd
38
tD(ON)
28
ns
tr
4.5
ns
tD(OFF)
9
ns
tf
ns
Gate-Drain Charge
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=15V
ID=1A
VGS=10V
RGEN=60 ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=15V,ID=25A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=25A
VDS=10V , ID=25A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=20A
25
32
42
m ohm
C
f=1.0MHz
C
VDS=15V,ID=25A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=10A
0.84
1.3
V
Notes
STB/P60L60
Ver 2.0
www.samhop.com.tw
Sep,14,2010
2
2
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=1.25mH,VDD = 30V.(See Figure13)
_
_
_


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