STB416D datasheet(3/11 Pages) SAMHOP

tên linh kiện	STB416D

Giải thích chi tiết về linh kiện	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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nhà sản xuất	SAMHOP [SamHop Microelectronics Corp.]

Trang chủ	http://www.samhop.com.tw

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4 Symbol

Min

Typ

Max

Units

BVDSS

-40

V

-1

IGSS

±100

nA

VGS(th)

-1

V

29

gFS

29

S

VSD

CISS

1050

pF

COSS

125

pF

CRSS

101

pF

Qg

17.5

nC

20

nC

Qgs

63.2

nC

Qgd

30.5

tD(ON)

22.5

ns

tr

2

ns

tD(OFF)

6.2

ns

tf

ns

Gate-Drain Charge

VDS=-20V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-20V

ID=-1A

VGS=-10V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=-20V,ID=-8A,VGS=-10V

Fall Time

Turn-On Delay Time

m ohm

VGS=-10V , ID=-8A

VDS=-10V , ID=-8A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=-250uA

VDS=-32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

P-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

-3

VGS=-4.5V , ID=-6.5A

36

45

61

m ohm

c

f=1.0MHz

c

VDS=-20V,ID=-8A,

VGS=-10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=-2A

-0.79

-1.2

V

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)

_

STB416D

www.samhop.com.tw

May,11,2010

3

nC

VDS=-20V,ID=-8A,VGS=-4.5V

11.1

_

-2

Ver 1.0

Số phần tương tự - STB416D

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