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TS5213CX533RFG bảng dữ liệu(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TS5213CX533RFG bảng dữ liệu(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 8 page TS5213 Taiwan Semiconductor Document Number: DS_P0000201 3 Version: G15 ELECTRICAL SPECIFICATIONS (VIN = VO+1V, IO = 100μA, COUT = 1μF, Vce≥2V, TA = 25°C unless otherwise noted) Enable Function PARAMETER CONDITIONS MIN TYP MAX UNIT Enable Input Logic-Low Voltage Regulation shutdown -- -- 0.6 V Enable Input Logic-High Voltage Regulation enable 2.0 -- -- V Enable Input Current VIL≤ 0.6V -- 0.01 1 μA VIH≥ 2.0V -- 15 50 V Note: 1. Exceeding the absolute maximum rating may damage the device. 2. The maximum allowable power dissipation at any TA is PD(MAX) = [TJ(MAX) - Ta] + RθJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. 3. Devices are ESD sensitive. Handling precautions recommended. 4. The device is not guaranteed to function outside its operating rating. 5. Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. 6. Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 1mA to 80mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 7. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at 1V differential. 8. Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. 9. Thermal regulation is defined as the change in output voltage at a time “t” after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a 80mA load pulse at VIH =16V for t=10ms. |
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