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1 / 5 page SS12P4S www.vishay.com Vishay General Semiconductor Revision: 17-Jan-14 1 Document Number: 89127 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMD Photovoltaic Solar Cell Protection Schottky Rectifier TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test Notes (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test PRIMARY CHARACTERISTICS IF(AV) 12 A VRRM 40 V IFSM 280 A EAS 20 mJ VF at IF = 12 A 0.43 V TJ max. 150 °C Package TO-277A (SMPC) Diode variations Single die K 2 1 TO-277A (SMPC) eSMP ® Series Anode 1 Anode 2 Cathode K MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS12P4S UNIT Device marking code 124S Maximum repetitive peak reverse voltage VRRM 40 V Maximum DC forward current (fig. 1) IF 12 (1) 4.4 (2) A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 280 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ Operating junction and storage temperature range TOP, TSTG -55 to +150 °C Junction temperature in DC forward current without reverse bias, t 1 h (3) TJ 200 °C |
Số phần tương tự - SS12P4S-M3-86A |
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Mô tả tương tự - SS12P4S-M3-86A |
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