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ES1F bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

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Giải thích chi tiết về linh kiện  Surface Mount Super Fast Rectifiers
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nhà sản xuất  TSC [Taiwan Semiconductor Company, Ltd]
Trang chủ  http://www.taiwansemi.com
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ES1F bảng dữ liệu(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- Super fast recovery time for high efficiency
- Built-in strain rellef
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
VRRM
50
100
150
200
300
400
500
600
V
VRMS
35
70
105
140
210
280
350
420
V
VDC
50
100
150
200
300
400
500
600
V
IF(AV)
A
Trr
ns
Cj
pF
TJ
OC
TSTG
OC
Document Number: DS_D1405052
Version:J14
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case:
DO-214AC (SMA)
DO-214AC (SMA)
ES1A thru ES1J
Taiwan Semiconductor
Surface Mount Super Fast Rectifiers
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
ES
1A
ES
1B
ES
1C
ES
1D
ES
1F
ES
1G
ES
1H
ES
1J
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
18
OC/W
Maximum DC blocking voltage
Maximum average forward rectified current
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
Maximum reverse current @ rated VR TJ=25 ℃
TJ=100℃
IR
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
VF
V
35
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
Typical junction capacitance (Note 3)
Typical thermal resistance
RθJL
RθJA
35
85
16
μA
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied VR=4.0 Volts
Note 1: Pulse test with PW=300μs, 1% duty cycle
0.95
1.3
1.7
5
100
Maximum reverse recovery time (Note 2)


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