STW9B12G datasheet(4/24 Pages) SEOUL

tên linh kiện	STW9B12G

Giải thích chi tiết về linh kiện	Thermally Enhanced Package Design

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nhà sản xuất	SEOUL [Seoul Semiconductor]

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Product Data Sheet

STW9B12G

– Mid-Power LED

4

Performance Characteristics

Parameter

Symbol

Value

Unit

Min.

Typ.

Max.

Forward Current

IF

-

30

40

mA

Forward Voltage

VF (30mA)

2.9

3.3

V

Luminous Intensity

(2,600~4,200 K)

Iv (30mA)

-

2.6

(7.8lm)

-

cd

(lm)

Color Rendering Index [1]

Ra

90

-

Viewing Angle [2]

2

Θ

1/2

120

Power Dissipation

Pd

-

132

mW

Junction Temperature

Tj

-

125

ºC

Operating Temperature

Topr

- 40

-

+ 85

ºC

Storage Temperature

Tstg

- 40

-

+ 100

ºC

Thermal resistance (J to S) [3]

Rθ

J-S

-

28

-

℃/W

ESD Sensitivity(HBM) [4]

-

5000

V

Table 3. Characteristics, IF=30mA , Ta=25ºC, RH30%

Notes :

(1) Tolerance is

2.0 on CRI measurements.

(2) 2Θ

1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity

(3) Thermal resistance: RthJS (Junction to Solder)

(4) A zener diode is included to protect the product from ESD.

•

LED’s properties might be different from suggested values like above and below tables if

operation condition will be exceeded our parameter range. Care is to be taken that power

dissipation does not exceed the absolute maximum rating of the product.

•

All measurements were made under the standardized environment of Seoul Semiconductor.

Số phần tương tự - STW9B12G

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Seoul Semiconductor	STW9B12B-NZ	947Kb / 23P	Achieving the best system cost in Mid Power
Seoul Semiconductor	STW9B12C	685Kb / 23P	Thermally Enhanced Package Design

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Mô tả tương tự - STW9B12G

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	STW8B12C	894Kb / 31P	Thermally Enhanced Package Design

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