công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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1N5819 bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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1N5819 bảng dữ liệu(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, SYMBOL Unit VRRM V VRMS V VDC V IF(AV) A Cj pF dV/dt V/μs TJ OC TSTG OC Document Number: D1307014 Version: F13 1N5817 thru 1N5819 Schottky Barrier Rectifier DO-204AL (DO-41) MECHANICAL DATA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Case: DO-204AL (DO-41) FEATURES Taiwan Semiconductor Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Polarity: Indicated by cathode band Weight: 0.33 gram (approximately) PARAMETER Maximum average forward rectified current MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) 1 Note 1: Pulse test with PW=300 μs, 1% duty cycle mA OC/W Voltage rate of change (Rated VR) 10000 Maximum reverse current @ rated VR TJ=25 ℃ TJ=100℃ IR Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM Maximum instantaneous forward voltage (Note 1) @ 1 A VF V 0.60 A RθJC RθJA Typical thermal resistance 20 30 40 20 30 40 14 21 10 55 1 - 55 to +125 Typical junction capacitance (Note 2) Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. - 55 to +125 Storage temperature range Operating junction temperature range 45 100 1N5817 1N5818 1N5819 0.45 0.55 28 30 |
Số phần tương tự - 1N5819 |
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Mô tả tương tự - 1N5819 |
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