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STS12N3LLH5 bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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Electrical characteristics
STS12N3LLH5
4/13
Doc ID 17152 Rev 3
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
30
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS =max rating @125 °C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = +22/-20 V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
1
V
RDS(on)
Static drain-source on-
resistance
VGS= 10 V, ID= 6 A
VGS= 4.5 V, ID= 6 A
0.0068
0.0084
0.0075
0.0092
Ω
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS=0
-
1290
240
32
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 12 A
VGS= 4.5 V
Figure 14
-
8
3.6
3.4
nC
nC
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=15 V, ID= 6 A,
RG=4.7 Ω, VGS =10 V
Figure 13
-
8.6
11.2
32.4
6
-
ns
ns
ns
ns


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