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KTB985 bảng dữ liệu(PDF) 1 Page - KEC(Korea Electronics) |
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KTB985 bảng dữ liệu(HTML) 1 Page - KEC(Korea Electronics) |
1 / 3 page 1999. 11. 30 1/3 SEMICONDUCTOR TECHNICAL DATA KTB985 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 1 VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1347. MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS A B D E G H K L 1. EMITTER 2. COLLECTOR 3. BASE P TO-92L 7.20 MAX 5.20 MAX 2.50 MAX 0.60 MAX 1.27 1.70 MAX 0.55 MAX 14.00 0.50 0.35 MIN 0.75 0.10 4 F J M O Q 25 1.25 Φ1.50 0.10 MAX DEPTH:0.2 123 B C Q K FF M M N N H L D C N P HH E H S 12.50 0.50 R 1.00 S 1.15 MAX +_ +_ +_ ELECTRICAL CHARACTERISTICS (Ta=25 ) Note : hFE (1) Classification A:100 200, B:140 280, C:200 400 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Vollector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current IC -3 A Collector Current (Pulse) ICP -6 A Collector Power Dissipation PC 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO VCB=-40V, IE=0 - - -1 Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -1 DC Current Gain hFE (1) (Note) VCE=-2V, IC=-100 100 - 400 hFE (2) VCE=-2V, IC=-3A 35 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-100 - -0.35 -0.7 V Base-Emitter Saturation Voltage VBE(sat) IC=-2A, IB=-100 - -0.94 -1.2 V Transition Frequency fT VCE=-10V, IC=-50 - 150 - Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 39 - Switching Time Turn-on Time ton - 70 - nS Storage Time tstg - 450 - Fall Time tf - 35 - IB2 470 Ω 25 5V -25V -10I 1=10I =I =1A BB2 C 100 Ω 50 VR IB1 PW=20 µs DC 1% R8 INPUT < = |
Số phần tương tự - KTB985 |
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Mô tả tương tự - KTB985 |
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