LDTC114GET1G_15 datasheet(1/3 Pages) LRC

tên linh kiện	LDTC114GET1G

Giải thích chi tiết về linh kiện	Bias Resistor Transistor

Download	3 Pages

Scroll/Zoom	100%

nhà sản xuất	LRC [Leshan Radio Company]

Trang chủ	http://www.lrc.cn/

Logo

1 / 3 page

3

COLLECTOR

2

EMITTER

1

BASE

R2

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

H8

3000/Tape & Reel

LESHAN RADIO COMPANY, LTD.

1/3

•

10000/Tape & Reel

We declare that the material of product compliance with

RoHS requirements.

LDTC114GET1G

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation,

making the device design easy.

Inverter, Interface, Driver

Features

•

• Applications

LDTC114GET1G

LDTC114GET3G

H8

10

Absolute maximum ratings (Ta=25

°C)

Electrical characteristics (Ta=25

°C)

1

2

3

SC-89

Parameter

Symbol

VCBO

VCEO

VEBO

IC

Pc

Tj

Tstg

Limits

50

5

100

200

150

−55 to +150

Unit

V

mA

mW

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector Power dissipation

Junction temperature

Storage temperature

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

R

50

5

−

300

−

30

−

7

−

250

10

−

0.5

580

0.3

−

13

V

µA

V

−

MHz

k

Ω

IC

=50µA

IC

=1mA

IE

=720µA

VCB

=50V

VEB

=4V

IC

=10mA, IB=0.5mA

IC

=5mA, VCE=5V

VCE

=10V, IE= −5mA, f=100MHz

∗

−

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Emitter-base resistance

∗ Characteristics of built-in transistor

Số phần tương tự - LDTC114GET1G_15

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Leshan Radio Company	LDTC114GET1G	346Kb / 3P	Bias Resistor Transistor

More results

Mô tả tương tự - LDTC114GET1G_15

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	MUN5111DW1T1	109Kb / 12P	Bias Resistor Transistor February, 2006 ??Rev. 8
ON Semiconductor	MUN5111T1	132Kb / 12P	Bias Resistor Transistor October, 2004 ??Rev. 7
Leshan Radio Company	LDTA123YET1G	258Kb / 3P	Bias Resistor Transistor
Leshan Radio Company	LDTA124GET1G	285Kb / 3P	Bias Resistor Transistor
Weitron Technology	MMUN2211	470Kb / 10P	Bias Resistor Transistor
ON Semiconductor	MMUN2211LT1	104Kb / 12P	Bias Resistor Transistor May, 2004 ??Rev. 4
E-Tech Electronics LTD	MMUN2211	269Kb / 8P	Bias Resistor Transistor
Leshan Radio Company	LDTC123TLT1G	217Kb / 3P	Bias Resistor Transistor
	MUN2211RT1	328Kb / 8P	Bias Resistor Transistor
	LDTA123YET1G	258Kb / 3P	Bias Resistor Transistor
	LDTC113ZET1G	278Kb / 3P	Bias Resistor Transistor

More results

LDTC114GET1G bảng dữ liệu(PDF) 1 Page - Leshan Radio Company

LDTC114GET1G bảng dữ liệu(HTML) 1 Page - Leshan Radio Company

Số phần tương tự - LDTC114GET1G_15

Mô tả tương tự - LDTC114GET1G_15

Html Pages

1 2 3

bảng dữ liệu tải về

Link URL