LDTB123ELT1G_15 datasheet(1/3 Pages) LRC

tên linh kiện	LDTB123ELT1G

Giải thích chi tiết về linh kiện	Bias Resistor Transistor

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nhà sản xuất	LRC [Leshan Radio Company]

Trang chủ	http://www.lrc.cn/

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Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

K5

2.2

3000/Tape & Reel

LESHAN RADIO COMPANY, LTD.

•

10000/Tape & Reel

We declare that the material of product compliance with

RoHS requirements.

LDTB123ELT1G

Inverter, Interface, Driver

Features

•

• Applications

LDTB123ELT1G

LDTB123ELT3G

K5

2.2

Absolute maximum ratings (Ta=25

°C)

1

2

3

SOT-23

3

COLLECTOR

2

EMITTER

1

BASE

R1

R2

Limits

Parameter

Symbol

Unit

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

3) Only the on / off conditions need to be set for operation,

making the device design easy.

VCC

−50

−12 to +10

−500

200

150

−55 to +150

V

VIN

V

mA

mW

IC

PD

Tj

Tstg

C

Supply voltage

Input voltage

Output current

Power dissipation

Junction temperature

Storage temperature

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

VI(off)

VI(on)

VO(on)

II

IO(off)

R1

GI

R2/R1

fT

Min.

−

−3

−

1.54

39

0.8

−

−0.1

−

2.2

−

1

200

−0.5

−

−0.3

−3.8

−0.5

2.86

1.2

−

V

VCC

= −5V, IO= −100µA

VO

= −0.3V, IO= −20mA

IO/II

= −50mA/−2.5mA

VI

= −5V

VCC

= −50V, VI=0V

VO

= −5V, IO= −50mA

VCE

= −10V, IE= 50mA, f= 100MHz

V

mA

µA

k

Ω

−

−−

−

MHz

Typ.

Max.

Unit

Conditions

∗

Input voltage

Output voltage

Input current

Output current

Input resistance

DC current gain

Resistance ratio

Transition frequency

∗ Characteristics of built-in transistor

Rev.O 1/3

S-LDTB123ELT1G

• S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

S-LDTB123ELT1G

S-LDTB123ELT3G

Số phần tương tự - LDTB123ELT1G_15

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Leshan Radio Company	LDTB123ELT1G	313Kb / 3P	Bias Resistor Transistor

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