IRF3205 datasheet(1/5 Pages) THINKISEMI

tên linh kiện	IRF3205

Giải thích chi tiết về linh kiện	N-Channel Trench Process Power MOSFET Transistor

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General Description

The IRF3205 is N-channel MOS Field Effect Transistor

designed for high current switching applications. Rugged

EAS capability and ultra low RDS(ON) is suitable for PWM,

load switching .

Features

● VDS=55V; ID=105A@ VGS=10V;

RDS(ON)<6.0mΩ @ VGS=10V

● Ultra Low On-Resistance

● High UIS and UIS 100% Test

Application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

Table 1.

Absolute Maximum Ratings (TA=25℃)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage (

VGS=0V)

55

V

VGS

Gate-Source Voltage (

VDS=0V)

±25

V

ID (DC)

Drain Current (DC) at Tc=25℃

105

A

ID (DC)

Drain Current (DC) at Tc=100℃

100

A

IDM (pluse)

Drain Current-Continuous@ Current-Pulsed

(Note 1)

420

A

dv/dt

Peak Diode Recovery Voltage

30

V/ns

PD

Maximum Power Dissipation(Tc=25℃)

139

W

Derating Factor

0.926

W/℃

EAS

Single Pulse Avalanche Energy

(Note 2)

625

mJ

TJ,TSTG

Operating Junction and Storage Temperature Range

-55 To 175

℃

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2.EAS condition:TJ=25℃,VDD=40V,V

B

GB=10V,RG=25Ω

Schematic Diagram

VDS = 55 V

ID = 105 A

RDS(ON) = 5.0 mΩ

TO-220CB Top View

● Inverter Application

®

IRF3205

Pb Free Plating Product

IRF3205

Pb

N-Channel Trench Process Power MOSFET Transistor

http://www.thinkisemi.com/

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Rev.05

G

D

S

Số phần tương tự - IRF3205

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IRF3205 bảng dữ liệu(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

IRF3205 bảng dữ liệu(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

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