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ST110S Datasheet(PDF) 2 Page - International Rectifier

tên linh kiện ST110S
Nội dung chi tiết  PHASE CONTROL THYRISTORS Stud Version
tải về  9 Pages
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nhà sản xuất  IRF [International Rectifier]
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ST110S Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
VV
mA
04
400
500
08
800
900
ST110S
12
1200
1300
20
14
1400
1500
16
1600
1700
I
T(AV)
Max. average on-state current
110
A
180° conduction, half sine wave
@ Case temperature
90
°C
I
T(RMS)
Max. RMS on-state current
175
A
DC @ 85°C case temperature
I
TSM
Max. peak, one-cycle
2700
t = 10ms
No voltage
non-repetitive surge current
2830
t = 8.3ms
reapplied
2270
t = 10ms
100% V
RRM
2380
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2t
Maximum I
2t for fusing
36.4
t = 10ms
No voltage
Initial T
J
= T
J
max.
33.2
t = 8.3ms
reapplied
25.8
t = 10ms
100% V
RRM
23.5
t = 8.3ms
reapplied
I
2
√t
Maximum I
2
√t for fusing
364
KA
2
√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.52
V
I
pk
= 350A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.90
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.79
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.81
(I >
π x I
T(AV)
),T
J
= T
J
max.
Parameter
ST110S
Units Conditions
0.92
(I >
π x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2s
V
m
mA
T
J
= 25°C, anode supply 12V resistive load
A
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
Ω, t
r
1µs
of turned-on current
T
J
= T
J
max, anode voltage
≤ 80% V
DRM
Gate current 1A, di
g
/dt = 1A/µs
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 100A, T
J
= T
J
max, di/dt = 10A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 100
Ω, t
p
= 500µs
Parameter
ST110S
Units Conditions
t
d
Typical delay time
2.0
Switching
t
q
Typical turn-off time
100
µs
500
A/µs
Next Data Sheet
Index
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