STT3921P_15 datasheet(1/2 Pages) SECOS

tên linh kiện	STT3921P

Giải thích chi tiết về linh kiện	P-Channel Enhancement Mode MOSFET

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Elektronische Bauelemente

STT3921P

-2.5A , -20V , RDS(ON) 130mΩ

Ω

P-Channel Enhancement Mode MOSFET

25-Nov-2013 Rev. A

Page 1 of 2

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide low RDS(on) and to

ensure minimal power loss and heat dissipation.

FEATURES

Low RDS(on) provides higher efficiency and extends

battery life

Low thermal impedance copper leadframe TSOP-6

saves board space

Fast switching speed

High performance trench technology

APPLICATION

DC-DC converters and power management in portable

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

Package

MPQ

Leader Size

TSOP-6

3K

7 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±12

V

TA=25°C

-2.5

Continuous Drain Current

1

TA=70°C

ID

-1.9

A

Pulsed Drain Current

2

IDM

-10

A

Continuous Source Current (Diode Conduction)

1

IS

-1.6

A

TA=25°C

1.15

Power Dissipation

1

TA=70°C

PD

0.7

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

t ≦ 10 sec

110

Maximum Junction to Ambient

1

Steady State

RθJA

150

°C / W

Notes:

1.

Surface Mounted on 1” x 1” FR4 Board.

2.

Pulse width limited by maximum junction temperature.

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

0

0.10

B

2.60

3.00

H

0.60 REF.

C

1.40

1.80

J

0.12 REF.

D

1.10 MAX.

K

0°

10°

E

1.90 REF.

L

0.95 REF.

F

0.30

0.50

TSOP-6

B

L

F

H

C

J

D G

K

A

E

1

2

3

4

5

6

Top View

Số phần tương tự - STT3921P_15

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