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STT3810N bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3810N bảng dữ liệu(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page Elektronische Bauelemente STT3810N 6A , 20V , RDS(ON) 24.5 m N-Channel Enhancement Mode Mos.FET 13-Aug-2012 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones Fast switch GPS Units and Media Players PACKAGE INFORMATION Package MPQ Leader Size TSOP-6 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V TA= 25°C 6 Continuous Drain Current 1 TA= 100°C ID 3.6 A Pulsed Drain Current 2 IDM 20 A Continuous Source Current (Diode Conduction) 1 IS 1 A TA= 25°C 0.83 Power Dissipation 1 TA= 100°C PD 0.3 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦10 sec 110 Maximum Junction to Ambient 1 Steady State RθJA 150 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 23 4 5 6 |
Số phần tương tự - STT3810N_15 |
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Mô tả tương tự - STT3810N_15 |
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