SMD Type

www.kexin.com.cn

4

MOSFET

.

■

Typical Characterisitics

Figure 10 . Single Pulse Maximum Power

Dissipation.

Figure 8. Capacitance Characteristics

.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

0

0.1

0.2

0.3

0.4

0.5

0.6

0

1

2

3

4

5

6

Q , GATE CHARGE (nC)

g

I = 0.22A

D

V

= 5V

DS

10V

0.4

0.8

2

5

10

25

40

0.01

0.03

0.1

0.3

1

V

, DRAIN-SOURCE VOLTAGE (V)

RD

S(O

N)

LIM

IT

DC

DS

10s

100m

s

10ms

V

= 4.5V

SINGLE PULSE

R

= 415 °C/W

T = 25°C

θJA

GS

A

1s

0.1

0.3

1

3

10

25

2

3

5

8

15

30

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f = 1 MHz

V

= 0 V

GS

Coss

Crss

0.0001

0.001

0.01

0.1

1

10

200

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=415°C/W

T = 25°C

θJA

A

0.0001

0.001

0.01

0.1

1

10

100

200

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

1

2

T - T = P * R

(t)

A

J

P(pk)

θJA

R

(t) = r(t) * R

R

=415

°C/W

θJA

θJA

θJA

Figure 11 . Transient Thermal Response Curve .

Thermal characterization performed using the conditions described in note 1.

Transient thermal response will change depending on the circuit board design.