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IRF237 bảng dữ liệu(PDF) 2 Page - Intersil Corporation |
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IRF237 bảng dữ liệu(HTML) 2 Page - Intersil Corporation |
2 / 7 page 5-2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRF234 IRF235 IRF236 IRF237 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS 250 250 275 275 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR 250 250 275 275 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 8.1 6.5 8.1 6.5 A TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D 5.1 4.1 5.1 4.1 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM 32 26 32 26 A Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 75 75 75 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.6 0.6 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS 180 180 180 180 mJ Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA, (Figure 10) IRF234, IRF235 250 - - V IRF236, IRF237 275 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ =125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V, (Figure 7) IRF234, IRF236 8.1 - - A IRF235, IRF237 6.5 - - A Gate to Source Leakage IGSS VGS = ±20V - - ±100 nA Drain to Source On-State Resistance (Note 2) rDS(ON) VGS = 10V, ID = 4.1A, (Figures 8, 9) IRF234, IRF236 - 0.32 0.45 Ω IRF235, IRF237 - 0.48 0.68 Ω Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 4.1A, (Figure 12) 2.9 4.3 - S Turn-On Delay Time td(ON) VDD = 125V, ID ≈ 8.1A, RG = 12Ω, RL = 1.1Ω VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature - 9.1 14 ns Rise Time tr -23 35 ns Turn-Off Delay Time td(OFF) -31 47 ns Fall Time tf -19 29 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 8.1A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature -24 35 nC Gate to Source Charge Qgs - 5.1 - nC Gate to Drain “Miller” Charge Qgd -12 - nC IRF234, IRF235, IRF236, IRF237 |
Số phần tương tự - IRF237 |
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Mô tả tương tự - IRF237 |
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