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ADM1052 bảng dữ liệu(PDF) 8 Page - Analog Devices |
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ADM1052 bảng dữ liệu(HTML) 8 Page - Analog Devices |
8 / 8 page REV. A –8– ADM1052 ADM1052 100 F 2 100 F 3.3V VOUT1 FORCE 1 SENSE 1 3.3V VOUT2 FORCE 2 SENSE 2 100 F 2 100 F SHDN1 SHDN2 LEAVE OPEN OR CONNECT TO LOGIC SIGNALS IF SHUTDOWN REQUIRED 1 F 12V VCC GND Figure 4. Typical Application Circuit SUPPLY DECOUPLING The supply to the drain of an external MOSFET should be decoupled as close as possible to the drain pin of the device, with a 100 µF capacitor to ground. The output from the source of the MOSFET should be decoupled as close as possible to the source pin of the device. Decoupling capacitors should be chosen to have a low Equivalent Series Resistance (ESR). With the MOSFETs specified and two 100 µF capacitors in parallel, the circuit will be stable for load currents up to 2 A. The VCC pin of the ADM1052 should be decoupled with a 1 µF capacitor to ground, connected as close as possible to the VCC and GND pins. OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead Small Outline Package (Narrow Body, SO-8) 0.0098 (0.25) 0.0075 (0.19) 0.0500 (1.27) 0.0160 (0.41) 8 0 0.0196 (0.50) 0.0099 (0.25) 45 85 4 1 0.1968 (5.00) 0.1890 (4.80) 0.2440 (6.20) 0.2284 (5.80) PIN 1 0.1574 (4.00) 0.1497 (3.80) 0.0500 (1.27) BSC 0.0688 (1.75) 0.0532 (1.35) SEATING PLANE 0.0098 (0.25) 0.0040 (0.10) 0.0192 (0.49) 0.0138 (0.35) In practice, the amount of decoupling required will depend on the application. PC motherboards are notoriously noisy environ- ments, and it may be necessary to employ distributed decoupling to achieve acceptable noise levels on the supply rails. CHOICE OF MOSFET As previously discussed, the load current at which an output goes into hiccup mode depends on the on-resistance of the external MOSFET. If the on-resistance is too low this current may be very high. While the Test Circuit (Figure 1) shows the use of the lower resistance PHD55N03LT from Philips on Channel 1 and the use of the higher resistance MTD3055VL from Motorola on Channel 2, the MTD3055VL is, in fact, suitable for both channels. Similarly, the PHB11N06LT from Philips is also suitable for both channels. THERMAL CONSIDERATIONS Heat generated in the external MOSFET must be dissipated and the junction temperature of the device kept within accept- able limits. The power dissipated in the device is, of course, the drain-source voltage multiplied by the load current. The required thermal resistance to ambient is given by JA = TJ(MAX) – TAMB(MAX)/(VDS(MAX) × I OUT(MAX)) Surface-mount MOSFETs such as those specified must rely on heat conduction through the device leads and the PCB. One square inch of copper (645 sq. mm) gives a thermal resistance of around 60 °C/W for a SOT-223 surface-mount package and 80 °C/W for a SO-8 surface-mount package. For higher power dissipation than can be accommodated by a surface-mount package D 2PAK or TO-220 devices are recom- mended. These should be mounted on a heatsink with a thermal resistance low enough to maintain the required maximum junc- tion temperature. |
Số phần tương tự - ADM1052_15 |
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Mô tả tương tự - ADM1052_15 |
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