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ADM1052 bảng dữ liệu(PDF) 8 Page - Analog Devices

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ADM1052 bảng dữ liệu(HTML) 8 Page - Analog Devices

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REV. A
–8–
ADM1052
ADM1052
100 F
2
100 F
3.3V
VOUT1
FORCE 1
SENSE 1
3.3V
VOUT2
FORCE 2
SENSE 2
100 F
2
100 F
SHDN1
SHDN2
LEAVE OPEN OR
CONNECT TO
LOGIC SIGNALS
IF SHUTDOWN
REQUIRED
1 F
12V
VCC
GND
Figure 4. Typical Application Circuit
SUPPLY DECOUPLING
The supply to the drain of an external MOSFET should be decoupled
as close as possible to the drain pin of the device, with a 100
µF
capacitor to ground. The output from the source of the MOSFET
should be decoupled as close as possible to the source pin of the
device. Decoupling capacitors should be chosen to have a low
Equivalent Series Resistance (ESR). With the MOSFETs specified
and two 100
µF capacitors in parallel, the circuit will be stable for
load currents up to 2 A. The VCC pin of the ADM1052 should be
decoupled with a 1
µF capacitor to ground, connected as close as
possible to the VCC and GND pins.
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Small Outline Package
(Narrow Body, SO-8)
0.0098 (0.25)
0.0075 (0.19)
0.0500 (1.27)
0.0160 (0.41)
8
0
0.0196 (0.50)
0.0099 (0.25)
45
85
4
1
0.1968 (5.00)
0.1890 (4.80)
0.2440 (6.20)
0.2284 (5.80)
PIN 1
0.1574 (4.00)
0.1497 (3.80)
0.0500 (1.27)
BSC
0.0688 (1.75)
0.0532 (1.35)
SEATING
PLANE
0.0098 (0.25)
0.0040 (0.10)
0.0192 (0.49)
0.0138 (0.35)
In practice, the amount of decoupling required will depend on
the application. PC motherboards are notoriously noisy environ-
ments, and it may be necessary to employ distributed decoupling
to achieve acceptable noise levels on the supply rails.
CHOICE OF MOSFET
As previously discussed, the load current at which an output
goes into hiccup mode depends on the on-resistance of the
external MOSFET. If the on-resistance is too low this current
may be very high. While the Test Circuit (Figure 1) shows the
use of the lower resistance PHD55N03LT from Philips on
Channel 1 and the use of the higher resistance MTD3055VL
from Motorola on Channel 2, the MTD3055VL is, in fact,
suitable for both channels. Similarly, the PHB11N06LT from
Philips is also suitable for both channels.
THERMAL CONSIDERATIONS
Heat generated in the external MOSFET must be dissipated
and the junction temperature of the device kept within accept-
able limits. The power dissipated in the device is, of course, the
drain-source voltage multiplied by the load current. The required
thermal resistance to ambient is given by
JA = TJ(MAX) – TAMB(MAX)/(VDS(MAX)
× I
OUT(MAX))
Surface-mount MOSFETs such as those specified must rely on
heat conduction through the device leads and the PCB. One
square inch of copper (645 sq. mm) gives a thermal resistance of
around 60
°C/W for a SOT-223 surface-mount package and
80
°C/W for a SO-8 surface-mount package.
For higher power dissipation than can be accommodated by a
surface-mount package D
2PAK or TO-220 devices are recom-
mended. These should be mounted on a heatsink with a thermal
resistance low enough to maintain the required maximum junc-
tion temperature.


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