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STK001SF bảng dữ liệu(PDF) 2 Page - KODENSHI_AUK CORP. |
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STK001SF bảng dữ liệu(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 8 page KSD-T5C044-001 2 STK001SF Electrical Characteristics (T A=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250A, VGS=0 20 - - V Gate threshold voltage VGS(th) ID=250A, VDS=VGS 0.6 - 1.2 V Drain-source cut-off current IDSS VDS=20V, VGS=0V - - 1 A Gate leakage current IGSS VDS=0V, VGS=12V - - 10 A Drain-source on-resistance ④ RDS(ON) VGS=4.5V, ID=1.6A - 33 50 m VGS=2.5V, ID=1.6A - 46 70 Forward transfer conductance ④ gfs VDS=5V, ID=3.2A - 10.5 - S Input capacitance Ciss VGS=0V, VDS=10V, f=1MHz - 395 - pF Output capacitance Coss - 97 - Reverse transfer capacitance Crss - 44 - Turn-on delay time td(on) VDD=10V, ID=3.2A RG=10Ω ③④ - 3.2 - ns Rise time tr - 2.8 - Turn-off delay time td(off) - 20 - Fall time tf - 2.8 - Total gate charge Qg VDD=10V, VGS=4.5V ID=3.2A ③④ - 6.8 10 nC Gate-source charge Qgs - 0.8 1.2 Gate-drain charge Qgd - 0.9 1.1 Source-Drain Diode Ratings and Characteristics (T A=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Continuous source current IS Integral reverse diode in the MOSFET - - 0.5 A Source current (Pulsed) ① ISM - - 2.0 Forward voltage ④ VSD VGS=0V, IS=0.5A - 0.7 1.2 V Reverse recovery time trr Is=3.2A, VDD=10V dIS/dt=70A/us - 24 - ns Reverse recovery charge Qrr - 120 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=3.0mH, IAS=3.8A, VDD=10V, RG=25 ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature |
Số phần tương tự - STK001SF |
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Mô tả tương tự - STK001SF |
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