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FSTJ9055D1 bảng dữ liệu(PDF) 2 Page - Intersil Corporation

tên linh kiện FSTJ9055D1
Giải thích chi tiết về linh kiện  Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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nhà sản xuất  INTERSIL [Intersil Corporation]
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2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSTJ9055D, FSTJ9055R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
-60
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-60
V
Continuous Drain Current
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
62
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
39
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
186
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
125
W
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
50
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.20
W/oC
Single Pulsed Avalanche Current, L = 100
µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS
186
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
62
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
186
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
-60
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
-7.0
V
TC = 25
oC
-2.0
-
-6.0
V
TC = 125
oC
-1.0
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = -48V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = -12V, ID = 62A
-
-
-1.55
V
Drain to Source On Resistance
rDS(ON)12
ID = 39A,
VGS = -12V
TC = 25
oC
-
0.016
0.023
TC = 125
oC
-
-
0.035
Turn-On Delay Time
td(ON)
VDD = -30V, ID = 62A,
RL = 0.48Ω, VGS = -12V,
RGS = 2.35Ω
-
-
50
ns
Rise Time
tr
-
-
120
ns
Turn-Off Delay Time
td(OFF)
-
-
100
ns
Fall Time
tf
-
-
40
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to -20V
VDD = -30V,
ID = 62A
-
-
330
nC
Gate Charge at 12V
Qg(12)
VGS = 0V to -12V
-
160
190
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to -2V
-
-
18
nC
Gate Charge Source
Qgs
-51
71
nC
Gate Charge Drain
Qgd
-31
46
nC
Plateau Voltage
V(PLATEAU) ID = 62A, VDS = -15V
-
-6
-
V
Input Capacitance
CISS
VDS = -25V, VGS = 0V,
f = 1MHz
-
7100
-
pF
Output Capacitance
COSS
-
2130
-
pF
Reverse Transfer Capacitance
CRSS
-
370
-
pF
Thermal Resistance Junction to Case
R
θJC
-
-
0.83
oC/W
FSTJ9055D, FSTJ9055R


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