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CA3086F bảng dữ liệu(PDF) 2 Page - Intersil Corporation

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CA3086
Absolute Maximum Ratings
Thermal Information
The following ratings apply for each transistor in the device:
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . .15V
Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . .20V
Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . .20V
Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . .5V
Collector Current, IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Resistance (Typical, Note 2)
θJA (oC/W) θJC (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . .
110
N/A
SOIC Package . . . . . . . . . . . . . . . . . . .
130
N/A
Maximum Power Dissipation (Any one transistor) . . . . . . . . .300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. To avoid
undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC) ground. A suitable
bypass capacitor can be used to establish a signal ground.
2.
θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25
oC, For Equipment Design
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-to-Base Breakdown Voltage
V(BR)CBO
lC = 10µA, IE = 0
20
60
-
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
15
24
-
V
Collector-to-Substrate Breakdown Voltage
V(BR)ClO
IC = 10µA, ICI = 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = 0
5
7
-
V
Collector-Cutoff Current (Figure 1)
ICBO
VCB = 10V, IE = 0,
-
0.002
100
nA
Collector-Cutoff Current (Figure 2)
ICEO
VCE = 10V, IB = 0,
-
(Figure 2)
5
µA
DC Forward-Current Transfer Ratio (Figure 3)
hFE
VCE = 3V, IC = 1mA
40
100
-
Electrical Specifications
TA = 25
oC, Typical Values Intended Only for Design Guidance
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
VALUES
UNITS
DC Forward-Current Transfer Ratio
(Figure 3)
hFE
VCE = 3V
IC = 10mA
100
IC = 10µA54
Base-to-Emitter Voltage (Figure 4)
VBE
VCE = 3V
IE = 1 mA
0.715
V
IE = 10mA
0.800
V
VBE Temperature Coefficient (Figure 5)
∆VBE/∆T
VCE = 3V, lC = 1 mA
-1.9
mV/oC
Collector-to-Emitter
Saturation Voltage
VCE SAT
IB = 1mA, IC = 10mA
0.23
V
Noise Figure (Low Frequency)
NF
f = 1kHz, VCE = 3V, IC = 100µA,
RS = 1kΩ
3.25
dB


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