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BUZ351 bảng dữ liệu(PDF) 1 Page - Intersil Corporation |
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BUZ351 bảng dữ liệu(HTML) 1 Page - Intersil Corporation |
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1 / 1 page Semiconductor 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ351 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA17434. Features • 11.5A, 400V •rDS(ON) = 0.400Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-218AC Ordering Information PART NUMBER PACKAGE BRAND BUZ351 TO-218AC BUZ351 NOTE: When ordering, use the entire part number. G D S GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet October 1998 File Number 2266.1 [ /Title (BUZ35 1) /Sub- ject (11.5A, 400V, 0.400 Ohm, N-Chan- nel Power MOS- FET) /Author () /Key- words (Harris Semi- conduc- tor, N- Chan- nel Power MOS- FET, TO- 220AB) /Cre- ator () /DOCIN FO pdf- mark [ /Page- Mode /Use- |
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