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FW231A-TL-E bảng dữ liệu(PDF) 1 Page - Sanyo Semicon Device

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Giải thích chi tiết về linh kiện  General-Purpose Switching Device Applications
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FW231A
No. A0515-1/4
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Semiconductors
DATA SHEET
O0406PA MS IM TC-00000221
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
FW231A
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
2.5V drive.
Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
8A
Drain Current (PW
≤10s)
ID
Duty cycle
≤1%
9
A
Drain Current (PW
≤10µs)
IDP
Duty cycle
≤1%
52
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (1500mm2!0.8mm) 1unit, PW
≤10s
2.3
W
Total Dissipation
PT
Mounted on a ceramic board (1500mm2!0.8mm) 1unit, PW
≤10s
2.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
µA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
µA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.5
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=8A
9
15
S
RDS(on)1
ID=8A, VGS=4.5V
10
17
23
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=8A, VGS=4V
11
18
24
m
RDS(on)3
ID=4A, VGS=2.5V
12
20
33
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
1530
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
230
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
215
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
See specified Test Circuit.
225
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
125
ns
Fall Time
tf
See specified Test Circuit.
125
ns
Marking :W231A
Continued on next page.
Ordering number : ENA0515


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