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N28F010-65 bảng dữ liệu(PDF) 8 Page - Intel Corporation

tên linh kiện N28F010-65
Giải thích chi tiết về linh kiện  1024K (128K x 8) CMOS FLASH MEMORY
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nhà sản xuất  INTEL [Intel Corporation]
Trang chủ  http://www.intel.com
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N28F010-65 bảng dữ liệu(HTML) 8 Page - Intel Corporation

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28F010
With CE
and OE
at a logic low level raising A9
to high voltage VID (see DC Characteristics) acti-
vates the operation Data read from locations 0000H
and 0001H represent the manufacturer’s code and
the device code respectively
The manufacturer- and device-codes can also be
read via the command register for instances where
the 28F010 is erased and reprogrammed in the tar-
get system Following a write of 90H to the com-
mand register a read from address location 0000H
outputs the manufacturer code (89H) A read from
address 0001H outputs the device code (B4H)
Write
Device erasure and programming are accomplished
via the command register when high voltage is ap-
plied to the VPP pin The contents of the register
serve as input to the internal state-machine The
state-machine outputs dictate the function of the
device
The command register itself does not occupy an ad-
dressable memory location The register is a latch
used to store the command along with address and
data information needed to execute the command
The command register is written by bringing WE
to
a logic-low level (VIL) while CE
is low Addresses
are latched on the falling edge of WE
while data is
latched on the rising edge of the WE
pulse Stan-
dard microprocessor write timings are used
Refer to AC Write Characteristics and the Erase
Programming
Waveforms
for
specific
timing
parameters
COMMAND DEFINITIONS
When low voltage is applied to the VPP pin the con-
tents of the command register default to 00H en-
abling read-only operations
Placing high voltage on the VPP pin enables read
write operations Device operations are selected by
writing specific data patterns into the command reg-
ister
Table 3 defines these 28F010 register
commands
Table 3 Command Definitions
Command
Cycles
Req’d
Bus
First Bus Cycle
Second Bus Cycle
Operation(1) Address(2) Data(3) Operation(1) Address(2) Data(3)
Read Memory
1
Write
X
00H
Read Intelligent Identifier
3
Write
IA
90H
Read
IA
ID
Codes(4)
Set-up EraseErase(5)
2
Write
X
20H
Write
X
20H
Erase Verify(5)
2
Write
EA
A0H
Read
X
EVD
Set-up ProgramProgram(6)
2
Write
X
40H
Write
PA
PD
Program Verify(6)
2
Write
X
C0H
Read
X
PVD
Reset(7)
2
Write
X
FFH
Write
X
FFH
NOTES
1 Bus operations are defined in Table 2
2 IA e Identifier address 00H for manufacturer code 01H for device code
EA e Erase Address Address of memory location to be read during erase verify
PA e Program Address Address of memory location to be programmed
Addresses are latched on the falling edge of the WE
pulse
3 ID e Identifier Data Data read from location IA during device identification (Mfr e 89H Device e B4H)
EVD e Erase Verify Data Data read from location EA during erase verify
PD e Program Data Data to be programmed at location PA Data is latched on the rising edge of WE
PVD e Program Verify Data Data read from location PA during program verify PA is latched on the Program command
4 Following the Read inteligent ID command two read operations access manufacturer and device codes
5 Figure 6 illustrates the Quick Erase Algorithm
6 Figure 5 illustrates the Quick Pulse Programming Algorithm
7 The second bus cycle must be followed by the desired command register write
8


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