công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
N28F010-90 bảng dữ liệu(PDF) 5 Page - Intel Corporation |
|
N28F010-90 bảng dữ liệu(HTML) 5 Page - Intel Corporation |
5 / 33 page E 28F010 5 1.0 APPLICATIONS The 28F010 flash memory provides nonvolatility along with the capability to perform over 100,000 electrical chip-erasure/reprogram cycles. These features make the 28F010 an innovative alternative to disk, EEPROM, and battery-backed static RAM. Where periodic updates of code and data tables are required, the 28F010’s reprogrammability and nonvolatility make it the obvious and ideal replacement for EPROM. Primary applications and operating systems stored in flash eliminate the slow disk-to-DRAM download process. This results in dramatic enhancement of performance and substantial reduction of power consumption—a consideration particularly important in portable equipment. Flash memory increases flexibility with electrical chip erasure and in-system update capability of operating systems and application code. With updatable code, system manufacturers can easily accommodate last-minute changes as revisions are made. In diskless workstations and terminals, network traffic reduces to a minimum and systems are instant-on. Reliability exceeds that of electro- mechanical media. Often in these environments, power interruptions force extended re-boot periods for all networked terminals. This mishap is no longer an issue if boot code, operating systems, communication protocols and primary applications are flash resident in each terminal. For embedded systems that rely on dynamic RAM/disk for main system memory or nonvolatile backup storage, the 28F010 flash memory offers a solid state alternative in a minimal form factor. The 28F010 provides higher performance, lower power consumption, instant-on capability, and allows an “eXecute in place” (XIP) memory hierarchy for code and data table reading. Additionally, the flash memory is more rugged and reliable in harsh environments where extreme temperatures and shock can cause disk-based systems to fail. The need for code updates pervades all phases of a system's life—from prototyping to system manufacture to after sale service. The electrical chip-erasure and reprogramming ability of the 28F010 allows in-circuit alterability; this eliminates unnecessary handling and less reliable socketed connections, while adding greater test, manufacture, and update flexibility. Material and labor costs associated with code changes increases at higher levels of system integration—the most costly being code updates after sale. Code “bugs,” or the desire to augment system functionality, prompt after sale code updates. Field revisions to EPROM-based code requires the removal of EPROM components or entire boards. With the 28F010, code updates are implemented locally via an edge connector, or remotely over a communcation link. For systems currently using a high-density static RAM/battery configuration for data accumulation, flash memory's inherent nonvolatility eliminates the need for battery backup. The concern for battery failure no longer exists, an important consideration for portable equipment and medical instruments, both requiring continuous performance. In addition, flash memory offers a considerable cost advantage over static RAM. Flash memory's electrical chip erasure, byte programmability and complete nonvolatility fit well with data accumulation and recording needs. Electrical chip-erasure gives the designer a “blank slate” in which to log or record data. Data can be periodically off-loaded for analysis and the flash memory erased producing a new “blank slate.” A high degree of on-chip feature integration simplifies memory-to-processor interfacing. Figure 3 depicts two 28F010s tied to the 80C186 system bus. The 28F010's architecture minimizes interface circuitry needed for complete in-circuit updates of memory contents. The outstanding feature of the TSOP (Thin Small Outline Package) is the 1.2 mm thickness. TSOP is particularly suited for portable equipment and applications requiring large amounts of flash memory. With cost-effective in-system reprogramming, extended cycling capability, and true nonvolatility, the 28F010 offers advantages to the alternatives: EPROMs, EEPROMs, battery backed static RAM, or disk. EPROM-compatible read specifications, straightforward interfacing, and in-circuit alterability offers designers unlimited flexibility to meet the high standards of today's designs. |
Số phần tương tự - N28F010-90 |
|
Mô tả tương tự - N28F010-90 |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |