N28F001BX-T150 datasheet(6/33 Pages) INTEL

tên linh kiện	N28F001BX-T150

Giải thích chi tiết về linh kiện	1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

Download	33 Pages

Scroll/Zoom	100%

nhà sản xuất	INTEL [Intel Corporation]

Trang chủ	http://www.intel.com

Logo

6 / 33 page

28F001BX-T28F001BX-B

PRINCIPLES OF OPERATION

The 28F001BX introduces on-chip write automation

to manage write and erase functions The write state

machine allows for 100% TTL-level control inputs

fixed power supplies during erasure and program-

ming minimal processor overhead with RAM-like

write timings and maximum EPROM compatiblity

After initial device powerup or after return from

deep powerdown mode (see Bus Operations) the

28F001BX functions as a read-only memory Manip-

ulation of external memory-control pins yield stan-

dard EPROM read standby output disable or Intelli-

gent Identifier operations Both Status Register and

Intelligent Identifiers can be accessed through the

Command Register when VPP e VPPL

This same subset of operations is also available

when high voltage is applied to the VPP pin In addi-

tion high voltage on VPP enables successful erasure

and programming of the device All functions associ-

ated with

altering memory contentsprogram

erase status and inteligent Identifierare accessed

via the Command Register and verified through the

Status Register

Commands are written using standard microproces-

sor write timings Register contents serve as input to

the WSM which controls the erase and program-

ming circuitry Write cycles also internally latch ad-

dresses and data needed for programming or erase

operations With the appropriate command written to

the register standard microprocessor read timings

output array data access the intelligent identifier

codes or output program and erase status for verifi-

cation

Interface software to initiate and poll progress of in-

ternal program and erase can be stored in any of the

28F001BX blocks This code is copied to and exe-

cuted from system RAM during actual flash memory

update

After successful completion of program

andor erase code execution out of the 28F001BX

is again possible via the Read Array command

Erase suspendresume capability allows system

software to suspend block erase and read dataexe-

cute code from any other block

Command Register and Write

Automation

An on-chip state machine controls block erase and

byte program freeing the system processor for other

tasks After receiving the erase setup and erase

confirm commands

the state machine controls

block pre-conditioning and erase returning progress

via the Status Register Programming is similarly

controlled after destination address and expected

data are supplied The program algorithm of past In-

tel Flash Memories is now regulated by the state

machine including program pulse repetition where

required and internal verification and margining of

data

Data Protection

Depending on the application the system designer

may choose to make the VPP power supply switcha-

ble (available only when memory updates are re-

quired) or hardwired to VPPH When VPP e VPPL

memory contents cannot be altered The 28F001BX

Command Register architecture provides protection

from unwanted program or erase operations even

when high voltage is applied to VPP Additionally all

functions are disabled whenever VCC is below the

write lockout voltage VLKO or when RP

is at VIL

The 28F001BX accommodates either design prac-

tice and encourages optimization of the processor-

memory interface

The two-step programerase write sequence to the

Command Register provides additional software

write protection

1FFFF

8-KByte BOOT BLOCK

1DFFF

1E000

4-KByte PARAMETER BLOCK

1CFFF

1D000

4-KByte PARAMETER BLOCK

1BFFF

1C000

112-KByte MAIN BLOCK

00000

Figure 7 28F001BX-T Memory Map

1FFFF

112-KByte MAIN BLOCK

03FFF

04000

4-KByte PARAMETER BLOCK

02FFF

03000

4-KByte PARAMETER BLOCK

01FFF

02000

8-KByte BOOT BLOCK

00000

Figure 8 28F001BX-B Memory Map

6

Số phần tương tự - N28F001BX-T150

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Intel Corporation	N28F010-120	405Kb / 30P	1024K (128K x 8) CMOS FLASH MEMORY
	N28F010-120	895Kb / 33P	28F010 1024K (128K X 8) CMOS FLASH MEMORY
	N28F010-150	405Kb / 30P	1024K (128K x 8) CMOS FLASH MEMORY
	N28F010-150	895Kb / 33P	28F010 1024K (128K X 8) CMOS FLASH MEMORY
	N28F010-65	405Kb / 30P	1024K (128K x 8) CMOS FLASH MEMORY

More results

Mô tả tương tự - N28F001BX-T150

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Intel Corporation	A28F200BX-T	459Kb / 33P	2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
	28F200BX-TB	562Kb / 48P	2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
	A28F200BR-TB	440Kb / 36P	2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
	28F200BL-TB	496Kb / 42P	2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
	28F002BC	455Kb / 37P	28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY
STMicroelectronics	M29W008ET	282Kb / 43P	8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
Intel Corporation	M28F008	401Kb / 28P	8 MBIT (1 MBIT x 8) FLASH MEMORY
Intel Corporation	VE28F008	381Kb / 26P	8 MBIT (1 MBIT x 8) FLASH MEMORY
Numonyx B.V	M29W800DT	1Mb / 52P	8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
Sharp Corporation	LH28F008SAHR	1Mb / 29P	8 MBIT(1 MBIT x 8)FLASH MEMORY

More results

N28F001BX-T150 bảng dữ liệu(PDF) 6 Page - Intel Corporation

N28F001BX-T150 bảng dữ liệu(HTML) 6 Page - Intel Corporation

Số phần tương tự - N28F001BX-T150

Mô tả tương tự - N28F001BX-T150

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33

bảng dữ liệu tải về

Link URL