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1 / 12 page November 2013 ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 www.fairchildsemi.com 1 FDD1600N10ALZD BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 6.8 A, 160 m Ω Features •RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A •RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A • Low Gate Charge (Typ. 2.78 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s PowerTrench® process that has been tailored to mini- mize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. Applications • LED Monitor Backlight • LED TV Backlight • LED Lighting • Consumer Appliances, DC-DC converter (Step up & Step down) 1 2 3 TO252-5L 4 5 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode 3 4,5 1 2 Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FDD1600N10ALZD Unit VDSS Drain to Source Voltage 100 V VGSS Gate to Source Voltage ±20 V ID Drain Current - Continuous (TC = 25oC) 6.8 A - Continuous (TC = 100oC) 4.3 IDM Drain Current - Pulsed (Note 1) 13.6 A EAS Single Pulsed Avalanche Energy (Note 2) 5.08 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TC = 25oC) 14.9 W - Derate Above 25oC0.12 W/oC IF Diode Continuous Forward Current (TC = 124oC) 4 A IFM Diode Maximum Forward Current 40 A TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FDD1600N10ALZD Unit RθJC Thermal Resistance, Junction to Case for MOSFET, Max. 8.4 oC/W RθJC Thermal Resistance, Junction to Case for Diode, Max. 3.3 RθJA Thermal Resistance, Junction to Ambient, Max. 87 |
Số phần tương tự - FDD1600N10ALZD |
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Mô tả tương tự - FDD1600N10ALZD |
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